Nanoscopic mechanism of Cu precipitation at small-angle tilt boundaries in Si

Abstract

We investigate copper (Cu) precipitation at small-angle tilt boundaries on (220) in Czochralski-grown p-type silicon (Si) ingots using transmission electron microscopy, atom probe tomography, and ab initio calculations. In the initial stage of precipitation, Cu atoms agglomerate along the boundaries, forming coherent layers (less than about 2 nm thick) of ${\mathrm{Cu}}_{3}\mathrm{Si}$ with a body-centered-cubic structure in a metastable state ($a=0.285$ nm). As the layers thicken, they become semicoherent with misfit dislocations on the (220) interphase boundaries, reducing coherency strains. Subsequently, the metastable layers convert into incoherent polyhedrons of orthorhombic ${\ensuremath{\eta}}^{\ensuremath{'}\ensuremath{'}}\text{\ensuremath{-}}{\mathrm{Cu}}_{3}\mathrm{Si}$ in the equilibrium state, forming interphase boundaries on {112} in Si. These results are similar to the Cu precipitation processes found in metallic alloys: the formation of Guinier-Preston zones followed by a conversion into the equilibrium $\ensuremath{\theta}$ phase.