Abstract

A door to the nanoscopic domain is opened regarding real-time visualization of electric field distributions and dynamics. Through the use of a live electrooptic imaging system with an oil-immersion objective lens and a highly thinned electrooptic sensor film, a minimum linewidth of 330 nm and a minimum peak splitting of 650 nm in real-time electric field video images have been successfully demonstrated. In addition, room to improve the resolution is noted, while a few problems that need to be solved are discussed, including an effect caused by optical interference.

Highlights

  • A door to the nanoscopic domain is opened regarding real-time visualization of electric field distributions and dynamics

  • A technique named live electrooptic (EO) imaging (LEI)[1,2,3], whose present configuration is shown in Fig. 1, has provided a unique solution with the advantage of experimental agility; two-dimensional (2D) electric field distributions up to the GHz range are visualized in real-time phase-evolving video formats

  • Real-time electric field images acquired in this work indicate (a) a minimum linewidth of 330 nm and a minimum peak splitting of 650 nm with more signal to noise ratios than 20 dB, (b) room for further improvement of the resolution, and (c) a few problems to be solved, including an effect caused by optical interference

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Summary

Introduction

A door to the nanoscopic domain is opened regarding real-time visualization of electric field distributions and dynamics. Real-time electric field images acquired in this work indicate (a) a minimum linewidth of 330 nm and a minimum peak splitting of 650 nm with more signal to noise ratios than 20 dB, (b) room for further improvement of the resolution, and (c) a few problems to be solved, including an effect caused by optical interference. The 2D distribution of the intensity modulation generated at an intermediate frequency (IF) fIF (= fRF − fLO ) in the kHz range (typically 5 kHz) is photodetected in quadrature by a high-speed complementary metal–oxide–semiconductor (CMOS) image sensor in an ultra-parallel manner (typically 100 × 100), leading to display of real-time phaseevolving electric field videos at a display frame rate fD (typically 10 frames per second). CMOS complementary metal–oxide–semiconductor, IF intermediate frequency, LO local oscillator, MZM Mach Zehnder optical modulator, NA numerical aperture, RF radio frequency, SLD super-luminescent diode

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