Abstract
Thick films in the Si-C-B system are prepared by a modified Chemical Vapor Deposition (CVD) method, the Chemical Vapor Synthesis (CVS). A hot wall reactor is used for the pyrolysis of tetramethylsilane and triethylborane under helium flow. One-dimensional gradients in composition and porosity are achieved over film thicknesses of up to 150 μm on silicon and graphite substrate materials at 1100°C. The dependence of process parameters, specifically reactor position and carrier gas flow on the film microstructure and microroughness is examined. The films consist of crystalline grains with sizes below 70 nm.
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