Abstract
Thick crystalline titania films with grain sizes below 30 nm, as well as nanocrystalline titania particles with sizes below 10 nm, are prepared by a modified CVD method called chemical vapor synthesis (CVS). Pyrolysis of titanium tetraisopropoxide (TTIP) is performed in a hot-wall reactor, in a mixed helium/oxygen atmosphere, using liquid precursor delivery. Film thicknesses of up to 150 μm on silicon (100) substrate materials are achieved. The influence of process parameters (particularly reactor position) on the microstructure and growth rate is examined. Process temperatures, starting at film-forming (CVD) conditions and going up to exclusive particle formation (CVS) are investigated. Grain size, particle size, and crystallographic phases are determined by X-ray diffraction (XRD), Brunauer–Emmett–Teller (BET), scanning electron microscopy (SEM), and transmission electron microscopy (TEM).
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