Abstract
We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (∼10–15%) of hafnium sub-oxides HfOy (y<2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed.
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