Abstract
The evolution of device miniaturization and the potential application for next-generation nonvolatile memory devices Pb(Zr0.53Ti0.47)0.60(Fe0.5Ta0.5)0.40O3 (PZTFT) can be used as a barrier in multiferroic tunnel junctions. We report single-phase magnetoelectric multiferroic ultra-thin PZTFT at room temperature. The magnetic and ferroelectric properties have been investigated down to 7 nm thickness which are requisite properties for multiferroic tunnel barriers for multi-states memory applications. In the present study, we show that it remains a switching multiferroic at room temperature down to at least thickness d = 7 nm, which is thin enough for tunnel junctions.
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