Abstract
Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic La0.7Ca0.3MnO3 and La0.7Sr0.3MnO3 as the electrodes and ferroelectric (Ba, Sr)TiO3 as the barrier in trilayer planner junctions. We show that very thin (Ba, Sr)TiO3 films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
