Nanoscale Multi-Line Patterning Using Sidewall Structure

Abstract

A patterning technique to define nanoscale multiple lines is developed and optimized using sidewall structure. About 50 nm poly-Si multiple lines, which have 70 nm as one of the narrowest space, are defined by sidewall multi-line patterning technique. These patterns have a good uniformity (deviation 1.5–4.7 nm). In addition, we can control line/space of patterns very easily by sidewall width control in this technique. And this is free from the proximity effect because of the process using sidewall hard mask. So, it is expected that the sidewall multi-line patterning technique can be applied to fabricate single electron devices, quantum devices, and other nanoscale devices.