Abstract
We demonstrate the resolution and characteristics of a nanolithographyprocess utilizing electron beam induced deposition (EBID) ofW(CO)6 and C10H8 to define the imaging and masking layers. Lines and dot matrices were defined/written withvarious electron beam doses onto both polymethylmethacrylate (PMMA) coated siliconsubstrates (PMMA-Si) and bare silicon substrates (Si). The selectivity of theW(CO)x for the PMMA dry development process (no measurable etching) and the silicon(∼18:1) reactive ion etchwas very good. C10H8 directly patterned on Si also provided good selectivity for the silicon etch process, 21:1.The pattern transfer of the EBID material patterns into the silicon had highfidelity. The resolution scaled with exposure dose and was correlated with theEBID broadening/scattering via a Monte Carlo simulation. Using the bi-layerapproach, imaging layers on PMMA-Si, a silicon nanowire resolution of 13.5 nmand linewidth of 24.5 nm are demonstrated. Furthermore, using the single-layerapproach, EBID directly on Si, a silicon nanowire resolution of 33 nm is demonstrated.
Published Version
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