Abstract
In this work, we investigated the polarization characteristics of nanoscale undoped hafnium oxide (HfO2) ferroelectric film. The nanoscale domain switching behavior of undoped HfO2 is mainly dominated by mixed ferroelectric/nonferroelectric crystalline phases and interface domain pinning by oxygen vacancies or defect traps. Our experimental results confirm that these issues can be improved by film thickness scaling and well-controlled mechanical stress. We demonstrated a 4-nm-thick undoped HfO2 negative capacitance thin film transistor (NCFET) with an energy-efficient switch characteristic of a low overdrive voltage of -0.6 V, a steep subthreshold swing of sub-60 mV/dec and a uniform hysteresis distribution of sub-60 mV.
Published Version
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