Abstract
ABSTRACT This paper deals with the DC and Radio Frequency (RF) characteristics of InAlAs/InGaAs-based dual-gate high-electron-mobility transistor (DG-HEMT) for a 50 nm gate length. In single-gate HEMT (SG-HEMT), the gate length having less than 100 nm shows poor transconductance (g m ) which reduces the voltage gain (A v ) and maximum oscillation frequency (f max). To overcome this problem, a dual-gate structure is designed keeping the device dimensions unchanged and a numerical model is developed to study the effect of the dual gate. A comparative study of SG-HEMT and DG-HEMT is presented. For a DG-HEMT, a maximum drain current (Ids ) of 310 mA/mm at Vds = 0.1 V, a peak transconductance (g m_max) of 2294 mS/mm, a cut-off frequency (fT ) of 100 GHz and a maximum oscillation frequency (f max) of 270 GHz have been achieved. For reduced gate length, the DG-HEMT performs better due to the presence of dual gate and double heterojunction.
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