Abstract

Organic thin-film transistor memory based on nano-floating-gate nonvolatile memory was demonstrated by a simple method. The gold nanoparticle that fabricated by thermally evaporated acted as the floating gate. Spin coated PMMA film acted as the tunneling layer. A solution-processed ambipolar semiconductor acted as the active layer. Because of the existence of both hole and electron carriers in bipolar semiconductor materials, it is more conducive to the editing and erasing of memories under positive and negative pressure. The memory based on metal nanoparticles and organic bipolar semiconductor shows good read-write function.

Highlights

  • Memory is one of the main applications of organic thin film transistors

  • Gold nanoparticles are used as a floating gate, polymethyl methacrylate (PMMA) is used as a tunnel insulating layer, and a bipolar organic semiconductor material is used as an active layer to prepare a nanoparticle suspension gate

  • It can be seen that after writing to a certain negative pressure, the holes in the channel will tunnel through the tunnel insulation and enter the floating gate of metal nanoparticles, generating an internal bond electric field opposite to the gate voltage direction, resulting in a negative drift of the threshold voltage

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Summary

Introduction

In the 1970s, Frohman-Bentchkowsky et al prepared floating gate transistors, which realized the injection and storage of charges in the floating gate, demonstrating the feasibility of using this structure as a memory.[1] In the following decades, transistor memory has made great progress and gradually moved towards practical applications. The research of transistor memory based on nanoparticle floating gate structure has made important progress.[4,5,6] Metal nanoparticles, such as aluminum, copper, silver, and gold, are often used as nano-floating-gates. Gold nanoparticles are used as a floating gate, polymethyl methacrylate (PMMA) is used as a tunnel insulating layer, and a bipolar organic semiconductor material is used as an active layer to prepare a nanoparticle suspension gate. Device electrical performance test: It is tested by the semiconductor parameter tester Agilent 4155C at room temperature in the air

Results and Discussion
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