Nanometer-scale silicide structures formed by focused ion-beam implantation

Abstract

We have demonstrated a new technique for direct patterning and formation of cobalt silicide structures using focused ion beam implantation. This mask-free-fabrication technique takes advantage of the influence on the kinetics of ion-beam mixing and properties of thin barrier oxides during silicide line formation. Silicide structures with dimensions of the order of 170 nm were produced on (100) silicon substrates. The process involves the ion implantation of 200 keV As <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">++</sup> through a thin cobalt film on SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Si structure. A selective reaction barrier at the Si/Co interface comprising of a thin (∼2 nm) oxide (SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ), prevents unwanted reactions with silicon. Ion-beam mixing was instrumental in fracturing of the oxide layer; thereby, allowing the migration of metal atoms across the Si/Co boundary for the silicidation reaction to proceed during subsequent rapid thermal anneal treatments. Diffusion controlled reactions advanced rapidly in the implanted areas, requiring a two-step anneal sequence to inhibit reaction elsewhere. A threshold dose of 3 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> was required for process initiation. Four-terminal resistance test structures were formed for electrical measurements. Resistivity obtained ranged on the order of 12 to 23 μΩ-cm. Application of this method can facilitate a wide variety of silicide structures.