Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer

Abstract

Recently several new approaches have been proposed to manufacture silicide structures using mask-less techniques. We have developed a new technique for direct patterning and formation of cobalt silicide structures using focused ion-beam (FIB) implantation. Utilizing the effects of ion-beam mixing and properties of thin barrier oxides, silicide lines with dimensions down to 170 nm were produced on (100) silicon substrates using the FIB. The process involves the ion implantation of 200 keV As++ through a cobalt thin film. A thin (∼2 nm) oxide (SiOx) at the Si/Co interface acts as a selective reaction barrier. Ion-beam mixing was instrumental in fracturing of the oxide layer, thereby allowing the silicidation reaction to proceed across the boundary during subsequent rapid thermal anneal treatments. Diffusion controlled reactions advanced rapidly in the implanted areas, while it is inhibited elsewhere. A threshold dose of 3×1015 cm−2 was required for process initiation. Four-terminal resistance test structures were formed for electrical measurements. Reported resistivity was in the range of 12 to 23±1 μΩ cm.