Abstract
Nanometer trenches were successfully produced by NaOH etching of the Ti oxide lines produced by atomic force microscopy (AFM) anodization on Ti thin films of 6 nm thickness on Si thermal oxidation films. The full width at half maximum (FWHM) of a nanometer trench is estimated to be approximately 20 nm, which is comparable to the radius of curvature of the AFM cantilever. It is found that the etching rate of the Ti oxide lines produced by AFM anodization depends on oxide lines height. The selection ratio of etching rate of the Ti thin film and oxide lines is 10 for oxide lines of 2 nm height, the etching rates being approximately 0.08 and 0.87 nm/min, respectively. Ti nanometer wires having 20 nm FWHM could be formed from two nanometer trenches placed close together in parallel.
Published Version
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