Abstract
Electrochemical anodizing of silicon in dilute nitric acid was used to form nanometer-thick SiO2 films under galvanostatic conditions. The effects of current density and electrolyte temperature were studied. The evolution of gaseous oxygen was shown to essentially influence the process kinetics and qualitatively can account for all of the observed process features. At oxide thicknesses above 5 nm, the oxide becomes porous and its electrical characteristics are much worse than those of thermally grown SiO2.
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