Abstract
A double Schottky interdigitated photodetector has been fabricated on GaInAs. The active layer of 0.7 μm thickness was grown on semi-insulating InP substrate by LPE. For x-ray lens application, Fresnel zone plates with 100 zones and a width of the outermost ring of 50 nm have been etched into AuPd. They are carried by a thin Si3N4 membrane providing good radiation transmission for optimum efficiency. To demonstrate the system performance, test structures for multi-level fabrication and field stitching have been generated. Thereby the overlay accuracy of two mask levels proves to be less than 20 nm along a field of 90 μ × 90 μm. Stiching of subfields (size 100 μm × 100 μm) showes an error of just 40 nm at the edges of the deflection field.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
