Abstract
A new method for analyzing semiconductor superlattices such as GaAs/Ga 1−xAl 1 is reported: An electron probe of 1–2 nm in size formed in a transmission electron microscope is incident in the [001] direction on a {110} cleaved crystal of the superlattices and scanned around the interfaces in the cross-sectional observation. The nanometer-area diffraction patterns are recorded continuously while scanning the probe. Using this method, the structural and compositional information can be obtained from nanometer-areas in the superlattices by comparing the actual diffraction patterns with the simulated ones.
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