Abstract
We report an investigation of the formation of triangular defects (TDs) in 4H–SiC expitaxial layers using Kelvin probe force microscopy (KPFM) and a nano-indenter. The results provide valuable information on the crystallographic structure, including the polytype nature of the TDs and surface potential profile. The TDs were also characterized using micro-Raman spectroscopy and high-resolution transmission electron microscopy. We found that the TDs were composed of a thick 3C-SiC band, as well as stacking faults (SFs) in the 4H-SiC epilayer.
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