Abstract
Semiconductor microcrystalline and nanosized materials based on SnO2/Sb2O5 and Со/SnO2/Sb2O5 were obtained using a coprecipitation method and sol-gel technology. The morphology and phase composition of the obtained materials were studied. It was found that the obtained Co-containing sensors based on gas sensitive layers created with nanosized material SnO2/Sb2O5 (0.15% Sb) show higher sensitivities to microconcentration of H2 (40 ppm) compared to the sensors based on gas sensitive layers with microcrystalline material. Studies of dynamic parameters of the sensors with similar chemical composition have shown that the sensors based on the nanomaterial have almost twice better response time and shorter recovery time compared to the sensors based on the microcrystalline material. The obtained results are explained by energy inhomogeneity of surfaces of gas sensitive layers of the sensors based on the nanosized and microcrystalline materials.
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