Abstract
As the semiconductor device scaling trend continues, advancement in both focused ion beam source development and application innovations are needed to retain failure analysis and nanomachining application capabilities. In this work, a neon gas field ionization source was studied for its nanomachining properties. The authors have analyzed neon’s nanomachining precision at 10 and 20 keV on blank Cu and SiO2 thin films. Subsurface material amorphization from neon and its correlation with beam current distribution are characterized by TEM. In addition, some preliminary nanomachining work was performed on a 32 nm test chip and successfully demonstrated end-pointing on various device layers.
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