Abstract
Nanolayers of pure boron (PureB) deposited on Si form p+-type regions at deposition temperatures from 50 °C to 700 °C. At 700 °C, commercial PureB photodiodes are produced for advanced detection systems including those in extreme-ultraviolet (EUV) lithography systems. In addition, potent MEMS applications of B-nanolayers have been demonstrated. Attractive diode characteristics were also found for devices where Ga wetting-layers were applied to the Si surface, both with/without an additional B capping-layer. The resulting “PureGa” and “PureGaB” diodes are assessed here in the light of investigations focused on the B-Si interface properties in PureB diodes. A very high density of acceptor states at the Si interface appears to be related to the p-dopant property of both B and Ga, even though diffusion into the Si is not expected for the applied processing temperatures from 50 °C to ~ 450 °C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
