Abstract
Abstract Important milestones in the path of development of semiconductor lasers are first indicated, followed by some basic equations related to semiconductor lasers. The design issues for attaining low threshold current, and high modulation bandwidth are then discussed. The chapter then focuses on nanolasers with their chronological development. The expression for normalized threshold in terms of the ratio of cavity loss and material loss with spontaneous emission coupling factor is then given, based on which a useful comparison of VCSELs, semiconductor nanolasers, spasers, and plasmonic nanolasers is made. Usage of nanolasers in optical interconnects, in particular, power needed to exceed thermal noise in receiver, modulation bandwidth, and linewidths are then evaluated and their efficacy to meet bandwidth and dissipation per bit stipulated by future data centres and computers are examined. In-built metal nanoparticle-based emitters in nanoantenna, based on inelastic electron tunnelling and resonant inelastic electron tunnelling are briefly discussed.
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