Abstract
Biodegradable Field-Effect Transistors High-performance transient field-effect transistors and capacitors are demonstrated by integrating HfO2/Al2O3 high-k bilayers on the transferred silicon nanomembranes and utilizing PLGA-gelatin-chitosan biodegradable substrates, as reported by Chen Liu, Zhuofan Wang, Yuming Zhang, and co–workers in article number 2201477. The developed transistors exhibit record-high electron mobility, high on/off ratio and on-state current. Accelerated soaking tests reveal the biodegradation kinetics of the transient devices, which are beneficial for precise control of the functional lifetimes.
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