Abstract
A two-dimensional superlattice metallic photonic crystal (PhC) and its fabrication by nanoimprint lithography on tantalum substrates are presented. The superior tailoring capacity of the superlattice PhC geometry is used to achieve spectrally selective solar absorption optimized for high-temperature and high-efficiency solar-energy-conversion applications. The scalable fabrication route by nanoimprint lithography allows for a high-throughput and high-resolution replication of this complex pattern over large areas. Despite the high fill factor, the pattern of polygonal cavities is accurately replicated into a resist that hardens under ultraviolet radiation over an area of 10 mm2. In this way, cavities of 905 nm and 340 nm width are achieved with a period of 1 μm. After pattern transfer into tantalum via a deep reactive ion-etching process, the achieved cavities are 2.2 μm deep, separated by 85–95 nm wide ridges with vertical sidewalls. The room-temperature reflectance spectra of the fabricated samples show excellent agreement with simulated results, with a high spectral absorptance approaching blackbody absorption in the range from 300 to 1900 nm and a steep cutoff. The calculated solar absorptivity of this superlattice PhC is 96% and its thermal transfer efficiency is 82.8% at an operating temperature of 1500 K and an irradiance of 1000 kW/m2.
Highlights
The MIT Faculty has made this article openly available
A superlattice PhC consisting of polygonal cavities gave superior control over the spectral properties to achieve a highly selective solar absorber with low thermal emission for high temperature energy conversion applications
A metallic superlattice PhC absorber was fabricated by nanoimprint lithography (NIL) as a high‐ throughput, high‐resolution technique paving the way for complex high‐temperature photonic components on a large scale
Summary
The MIT Faculty has made this article openly available. Please share how this access benefits you. Rinnerbauer, V.; Lausecker, E.; Schäffler, F.; Reininger, P.; Strasser, G.; Geil, R.
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