Nanoimprint lithography for grayscale pattern replication of MEMS mirrors in a 200 mm wafer

Abstract

In this work a multilevel nanoimprint lithography (NIL) replication process was demonstrated to produce 1D MEMS mirrors employing vertical asymmetric comb-drive electrostatic actuation, in a 200 mm wafer SOI-based process. In comparison with a direct write laser (DWL) grayscale lithography step (which for the proposed layout requires around 40 h of exposure time per wafer), this NIL method greatly enhances fabrication throughput by reliably reproducing a master's multilevel topography onto the photoresist. This study describes the NIL master fabricated using grayscale lithography, the working stamp, and the replication micromachining processes. An extensive characterization of the morphology and topography of the intermediate working stamp is provided, along with an optimization study of the replica fabrication and the alignment procedure between the replica and the mirror substrate. The MEMS device pattern was effectively replicated, exhibiting electrode gaps of 3.66 μm (grayscale process yields gaps of 3.5 μm). Discrete photoresist levels of 1.53 μm and 2.83 μm were observed, with a misalignment to the preceding metal layer of 5 μm and 10 μm in the x and y directions, respectively. These deviations were found to be within the required alignment margin defined by the layout (20 μm). The 1D MEMS mirror fabricated using this NIL process was successfully characterized using Scanning Laser-Doppler Vibrometry under atmospheric pressure conditions. The results obtained were in accordance with the theoretical design parameters, demonstrating that NIL can be successfully used as a fast, low-cost alternative lithography process to fabricate multilevel MEMS structures.