Abstract

We developed a lift-off process for a nanoimprint lithography (NIL) using poly(vinyl alcohol) (PVA) as the replicated material. PVA could easily be dissolved in water. A conventional lift-off process using poly(metyl methacrylate) (PMMA) uses acetone as a solvent, while the lift-off process using PVA uses water as a solvent, which is an ecologically friendly process. We demonstrated Au patterns with sub-µm dimensions using a lift-off process with a PVA single layer. In addition, an Hydrogen silsesquioxane (HSQ)/PVA bilayer structure was used for the lift-off process. This bilayer structure could be fabricated by room-temperature NIL and dry etching. Au patterns were easily obtained using the bilayer structure having an inverse tapered shape. In the lift-off process without using HSQ/PVA bilayer, Au wiring with sub-µm linewidth could be obtained, however, 100-nm-linewidth patterns did not remained. Line-and-spacing gratings of 100 nm in the Au patterns were demonstrated using the water lift-off process with the HSQ/PVA bilayer structure.

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