Abstract
Hexagonally ordered nanohole patterns were produced on Ge(100) surfaces by focused Ga+ ion beam and broad Ga+ ion beam irradiations with 5 keV energy under normal incidence. Identical patterns were obtained by irradiations with a scanning focused ion beam under different irradiation conditions and with a broad Ga+ beam without scanning and five orders of magnitude smaller ion flux. Thus, we could demonstrate that nanohole pattern formation is independent of ion flux over several orders of magnitude and scanning of a focused ion beam under appropriate conditions is identical to broad ion beam irradiation.
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