Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes

Abstract

As a result of theoretical and experimental analyses, the parameters of heterostructures with InAs quantum dots in a GaAs matrix are determined, which provide the development of high-speed and efficient plasmon-polariton near-infrared light-emitting Schottky diodes based on such structures. The quantum dots should be arranged on a heavily doped (to a dopant concentration of 1019 cm–3) GaAs buffer layer and be separated from the metal by a thin (10–30 nm thick) undoped GaAs cap layer. The interface between the metal (e.g., gold) and GaAs provides the efficient scattering of surface plasmon-polaritons to ordinary photons if it contains inhomogeneities shaped as metal-filled cavities with a characteristic size of ~30 nm and a surface concentration above 1010 cm–2.