High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer

Abstract

Ordered and dense InAs quantum dots grown on patterned Si(100) with a thin GaAs bufferlayer have been investigated by transmission electron microscopy and electron energy lossspectroscopy. {111} faceted InAs quantum dots with good crystallinity were observed on topof the underlying GaAs buffer layer. It was revealed that the GaAs buffer layer and thelateral expansion of InAs have played key roles in releasing the misfit strain between InAsand Si and suppressing the formation of lattice defects in InAs quantum dots. These resultssuggest a possible pathway for the strain relaxation in the formation of quantumdots.