Nanodomain manipulation for ultrahigh density ferroelectric data storage

Abstract

Nanosized inverted domain dots in ferroelectric materials have potential application inultrahigh density rewritable data storage systems. Herein, a data storage system ispresented based on scanning non-linear dielectric microscopy and a thin film offerroelectric single-crystal lithium tantalite. Through domain engineering, wesucceeded in forming our smallest artificial nanodomain single dot at 5.1 nmdiameter and an artificial nanodomain dot array with a memory density of10.1 Tbit inch−2 and a bit spacing of 8.0 nm, representing the highest memory density for rewritabledata storage reported to date. Subnanosecond (500 ps) domain switching speedhas also been achieved. Next, actual information storage with a low biterror and high memory density was performed. A bit error ratio of less than1 × 10−4 was achieved atan areal density of 258 Gbit inch−2. Moreover, actual information storage is demonstrated at a density of1 Tbit inch−2.