Abstract
Reported are fabrication and characterisation of a novel vacuum logic OR gate using two identical nanodiamond lateral field emission diodes fabricated on silicon-on-insulator wafers. Each diode consists of 9000 finger-like emitters with 4 µm interelectrode spacing. High and stable emission current with low turn-on field have been observed and verified by a Fowler-Nordheim plot for each structure. Diode-resistor logic is used to realise the logic OR function. This nanodiamond vacuum logic gate is very promising for application in harsh environments.
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