Abstract
A field emission device in lateral configuration is a favourable construct for electron emission due to versatility for electrode geometry design, precise control of anode-cathode spacing, and low capacitance. The development of micropatterning nanodiamond (ND) films using reactive ion etching has been critical to the utilization of ND as an electron emitter. We have fabricated lateral devices with high aspect ratio, finger-like ND emitters with sharp apexes and investigated how the number of emitters scales with respect to the forward emission current derived from the ND lateral device. We also report total dose (15 Mrad(SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> )) and high temperature (>200degC) tests on these devices. No measurable change in the device performance is observed under adverse operating conditions
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