Abstract
An inductively coupled plasma (ICP) chemical vapor deposition (CVD) chamber has been modified to include a grounded, perforated, separator plate below the high density plasma source. A low-temperature (150 °C) ICP-CVD process for nanocrystalline Si (nc-Si) deposition has been developed using the modified plasma chamber. The separator plate causes an increase in hydrogen partial pressure from the species released from the deposit on itself and also minimizes the ion bombardment of the substrate placed on the grounded electrode below it. As a result, nc-Si deposition was achieved with high growth rates (>6 Ås−1) and without having to dilute the SiH4 precursor gas with H2. The films are characterized by Raman spectroscopy, x-ray diffraction, and photo-conductivity measurements. The developed process, scalable to large areas, is advantageous for devices with large area and flexible electronics such as solar cells and thin-film transistors.
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