Abstract
In this study, e-beam evaporation technique was used to fabricate thin-film (TF) of β-Ga2O3 on Si-substrate. The average crystallite size was determined to be roughly ∼39.8 nm. The deposition of β-Ga2O3 TF appears smooth and devoid of cracks or pits, with an average film thickness of ∼375 nm. From the ultraviolet (UV)–Vis absorption, the optical bandgap value for β-Ga2O3 TF was found to be about ∼4.84 eV. Our study found that the photodetector (PD) had excellent performance, characterized by an extremely low dark current of 4.02 × 10−8 A at −1 V bias, an I L/I D ratio over nine times, and the short rise and fall times of .27 s and .059 s. The simultaneous achievement of minimal dark current and quick rise and fall times is remarkable. The β-Ga2O3 TF PD’s remarkable consistency and reproducibility suggest promising practical applications for UV PDs.
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