Abstract
High-quality Ga2O3 films are obtained by spray pyrolysis from aqueous solutions through optimization of the solution composition and the spraying process parameters.
Highlights
Gallium oxide (Ga2O3), depending on the growth conditions and the crystal structure, is either an insulator or an n-type, wide-band gap semiconductor
Structural and optical film properties of the deposited nanocrystalline Ga2O3 were evaluated by scanning electron microscopy, grazing-incidence X-ray diffraction, atomic force microscopy and optical spectroscopy
The elemental composition of the surface and the bulk film was analyzed by X-ray photoemission spectroscopy depth profiling
Summary
Gallium oxide (Ga2O3), depending on the growth conditions and the crystal structure, is either an insulator or an n-type, wide-band gap semiconductor. Ultrasonic agitation results in small droplet sizes (10–20 mm) with a uniform size distribution.[20] Smaller solvent droplets are evaporated faster and the precursor salt decomposes before reaching the substrate surface, giving rise to film formation from the vapor phase This technique has already been applied for the deposition of Ga2O3 films,[12,21,22,23,24,25,26] but most of the reported works have used toxic or flammable organic solvents like methanol[24] and ethanol[12,22] in the precursor solution. The sheet-resistance was measured using a 4-point probe setup (Suss MicroTec probes) connected to a semiconductor parameter analyser (Agilent 4156 C)
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