Abstract
Grain boundaries in doped ceria electrolytes have a deleterious effect on the total ionic conductivity especially at intermediate temperatures (300 550 °C) [1,2]. The high resistivity of grain boundaries has been attributed to a space charge double layer which is believed to create a vacancy depletion region emanating from grain interfaces. Other factors may also contribute to high grain boundary resistance. For example, recent high resolution elemental analysis in the transmission electron microscope (TEM) of 20% Gd-doped ceria (GDC) by our group and others shows significant Gd segregation to grain boundaries yielding enrichment zones of approximately 60 at% Gd, far exceeding the optimal Gd concentration (10 20 at%) for maximum ionic conductivity.
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