Abstract
The chemical, compositional, and electrical properties of grain boundaries in polycrystalline Si are investigated. Segregated impurities localized on grain boundaries are mapped using high‐resolution AES in conjunction with an in situ fracture technique. The electrical activity of these impurities is evaluated within the grain boundary plane using a surface potential measurement method. The effects of illumination on the barrier potential and minority‐carrier lifetimes of clean and intentionally doped (Al, Ti) grain boundaries are presented. The effects of annealing on grain boundaries containing various impurities are discussed. SIMS profiling with complementary minority‐carrier lifetime data provide evidence for the segregation of oxygen during high‐temperature (900 °C) annealing and identifies this mechanism as the probable source for electrical activation of such grain boundaries.
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