Abstract
In this article the properties of grain and twin boundaries in polycrystalline silicon layers grown by the ribbon-against-drop process are reported; the thermal diffusion of phosphorus, the electrical activity of these defects and their passivation by hydrogen are discussed. Autoradiography experiments did not evidence any significant intergranular diffusion of phosphorus; crossed electron-beam-induced current (or light-beam-induced current) and autoradiography experiments strongly suggest that the recombination at grain and twin boundaries is dominated by impurities. Finally, it is shown that the hydrogen passivation is associated with retarded diffusion and large segregation effects.
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