Abstract
A double patterning process is presented to pattern sub-35 nm wide channels in hydrogen silsesquioxane with near 100% pattern densities. Using aligned electron beam lithography, each side of the nanochannel structure is patterned as a separate layer. A 50 000 μC/cm2 high-dose anneal is applied to the first layer after exposure and develop to densify the structure and improve resistance to subsequent chemical exposure. Channels with widths below ∼60 nm are shown to exhibit footing with standard tetramethyl ammonium hydroxide developers. This problem is resolved by adding surfactant during the development of the final channel structure. The resulting process produced channels <35 nm wide with smooth sidewalls and a height of 45 nm.
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Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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