Abstract
This paper discusses an application of molecular beam epitaxy (MBE) to a nano-texturing process. Silicon molecules grow laterally along the specific crystal planes of a silicon substrate under a specific condition. It was found that a pre-processed array of holes could compose nano-texture because it constricted these lateral growths to the specific directions of substrate. This paper clarifies the mechanism and the design of texturing. Depending on the arrangement of the hole array, various textures were obtained and their geometry and accuracy were also discussed.
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