Nano-Second Pulse Programming of Resistive RAM Devices and Its Benefits

Abstract

ReRAM devices have shown interesting results through traditional current v. voltage characterization involving the use of complex voltage sources with current compliance. While these results may be used to roughly estimate and display functionality, they do not allow for accurate estimate of switching time, injected power, small programmers and therefore interest to the industry. Given today’s constraints in terms of power and real estate, it is appealing to transition towards simpler pulse amplitude/width modulation strategies. We present a TiN/SiOx/TiN device which relies on intrinsic switching and is successfully programmed by means of nano-second pulses. This leads to a better understanding of the switching mechanism, non-redundant power injection, accurate power consumption estimates and the possibility of compact and efficient programming circuits. Issues involving high frequency transmission lines were taken into account. Dynamically changing impedance in the device under test leads to a need for careful consideration of pulse magnitude.