Nano Scale Soi Mosfet Structures and Study of Performance Factors

Abstract

This paper proposes a study related with the downscaling trend in CMOS devices. Some of the structural variants of the MOSFET have been explored and the key performance factors as gate tunneling current, transconductance and output conductance are discussed. The impact of energy quantization on gate tunneling current is studied for double-gate and ultra thin body MOSFETS. Reduced vertical electric field and quantum confinement in the channel of these thin-body devices causes a decrease in gate leakage. Very high transconductance, approaching the ballistic limit, can be achieved provided that technological improvements further increase the electron mobility in the silicon film. The output conductance and Early voltage are severely affected by length scaling as channel length-modulation (CLM) and drain-induced barrier lowering (DIBL) effects become more important, but they are acceptable for channel lengths above 15 nm. . Sanjeev Jain Ssvps Bsd College Of Engg. Vidyanagari Deopur, Dhule Prasad Vinchurkar Ssvps Bsd College Of Engg. Vidyanagari Deopur, Dhule The full text of the article is not available in the cache. Kindly refer the IJCA digital library at www.ijcaonline.org for the complete article. In case, you face problems while downloading the full-text, please send a mail to editor at editor@ijcaonline.org