Abstract
Abstract Use of solid state ionic conductors the so-called Solid Electrolytes has brought new impetus to the field of solid state memories namely resistive random access memory (Re-RAM). In this review article, to begin we present the detailed understanding on the basics of solid electrolytes. Later, the same has been reviewed focusing on its application in novel solid state memory applications. Few examples of solid electrolytes are considered and their impact on the state-of-art research in this domain is discussed in detail. An in-depth analysis on the fundamentals of Resistive switching mechanism involved in various classes of Memristive devices viz., Electrochemical Metallization Memories (ECM) and Valence change Memories (VCM). A few important applications of Memristors such as Neuristor and artificial synapse in neuromorphic computing are reviewed as well. Finally, the most anticipated energy efficient battery-like cells as artificial synapse in brain-inspired computing is also covered.
Highlights
The key parameters that determine the performance of the memory element is reproducibility, endurance, density, cost, read time, write time, Read/Write Energy
To begin we present the detailed understanding on the basics of solid electrolytes
An in-depth analysis on fundamentals of Resistive switching mechanism involved in resistive switching random access memories (ReRAM) devices is done with aid of advanced characterization and their impact on state of art of research in this domain is discussed in detail
Summary
The key parameters that determine the performance of the memory element is reproducibility, endurance, density, cost, read time, write time, Read/Write Energy. The fingerprint of memristor is a hysteresis loop pinched at origin elucidates the word write and erase in a cyclic manner This lies under the umbrella of ReRAM [12]. The typical computing application for such class of device is resistive switching random access memories (ReRAM). Memristor is being used to fabricate neuristor which is considered to be the electrical equivalent of the biological neuron [18]. An in-depth analysis on fundamentals of Resistive switching mechanism involved in ReRAM devices is done with aid of advanced characterization and their impact on state of art of research in this domain is discussed in detail. A few important applications of Memristors such as Neuristor and artificial synapse in neuromorphic computing are reviewed as well. The energy efficient battery-like cells as artificial synapse in braininspired computing are covered
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