Nano-positive up negative down in binary oxide ferroelectrics

Abstract

Ferroelectric HfO2 and ZrO2-based materials are promising candidates for next-generation ferroelectric devices, but their characterization is challenging due to complex factors such as crystal phases, degradation mechanisms, and local inhomogeneities. In this work, we propose a novel nanosized positive-up-negative-down (PUND) method to assess the ferroelectric response of doped-HfO2. This method is based on actual current probing and is immune to most electrostatic artifacts that plague other electrical atomic force microscopy (AFM) techniques. We demonstrate the PUND method’s ability to induce ferroelectric switching in Si-doped HfO2 and investigate the distinctive PUND response obtained for individual grains. We also extract the polarization charge based on a direct estimate of the tip–sample contact area. The proposed PUND method is a significant innovation as it is a method to combine the high spatial resolution of AFM with the immunity to electrostatic artifacts of current probing. This makes it a powerful tool for studying ferroelectric materials at the nanoscale, where local inhomogeneities and other effects can have a significant impact on their behavior. The PUND method is also notable for its ability to extract polarization charge based on a direct estimate of the tip–sample contact area. This is a significant improvement over previous methods, which often relied on indirect or approximate estimates of the contact area. Overall, the PUND method is a novel and innovative technique that offers significant advantages for the characterization of ferroelectric materials at the nanoscale. It is expected to have a major impact on the research and development of next-generation ferroelectric devices.