Abstract
AbstractFerroelectric vinylidene fluoride‐trifluoroethylene copolymer [P(VDF‐TrFE)] free‐standing ultrahigh density (≈75 Gb inch−2) nanodot arrays are successfully fabricated through a facile, high‐throughput, and cost‐effective nano‐imprinting method using disposable anodic aluminum oxide with orderly arranged nanometer‐scale pores as molds. The nanodots show a large‐area smooth surface morphology, and the piezoresponse in each nanodot is strong and uniform. The preferred orientation of the copolymer chains in the nanodot arrays is favorable for polarization switching of single nanodots. The ferroelectric polymer memory prototype can be operated by a few volts with high writing/erasing speed, which comply with the requirements of integrated circuit. This approach provides a way of directly writing nanometer electronic features in two dimensions by piezoresponse force microscopy probe based technology, which is attractive for high density data storage.
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