Abstract
In this report, ordered lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanodot arrays were fabricated by an original one-step mask etching route. The one-step mask etching strategy is based on the patterned nanostructure of barrier layer (BL) at the bottom of anodic aluminum oxide (AAO), by a direct transfer of the nanopattern from BL to the pre-deposited PZT film, without introduction of any sacrifice layer and lithography. Therefore, the presented strategy is relatively simple and economical. X-ray diffraction and Raman analysis revealed that the as-prepared PZT was in a perovskite phase. Atomic and piezoresponse force microscopy indicated that the PZT nanodot arrays were with both good ordering and well-defined ferroelectric properties. Considering its universality on diverse substrates, the present method is a general approach to the high-quality ordered ferroelectric nanodot arrays, which is promising for applications in ultra-high density nonvolatile ferroelectric random access memories (NV-FRAM).
Highlights
Ordered nanodot arrays have attracted great research attention in the last decade because of their applications in the functional nanodevices, such as high-density information storage media [1, 2] and highly sensitive sensors [3, 4]
Considering the universality of the ion beam etching (IBE) on diverse substrates, the present method is a general approach to the high-quality ordered ferroelectric nanodot arrays, which is promising for applications in ultra-high density nonvolatile ferroelectric random access memories (NV-FRAM)
Without the pore-widening and pore-through procedures, the anodic aluminum oxide (AAO) membrane with barrier layer (BL) was directly transferred onto the PZT thin film, which was synthesized on the Pt/Si substrate by a sol-gel method
Summary
Ordered nanodot arrays have attracted great research attention in the last decade because of their applications in the functional nanodevices, such as high-density information storage media [1, 2] and highly sensitive sensors [3, 4]. Molecular beam epitaxy (MBE) [9,10,11] and self-organized growth techniques [12, 13] were more appropriate than the complicated lithography. Pore-through thin AAO membrane can be used as a nanopatterning mask, combined with many other techniques, to synthesize functional nanodot arrays. These techniques include chemical vapor deposition (CVD) [19], physical vapor deposition (PVD) [20, 21], and dry etching [22,23,24,25,26,27,28,29].
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