Abstract
A compliant substrate has been prepared for growth of metamorphic semiconductor films on a Si-based platform. It involves the formation of a dilute GeSi layer by implanting Ge+ into a silicon-on-insulator (SOI) substrate. Thermal oxidation segregates the Ge at the growing oxide interface to form a distinct GexSi1-x thin-film with a composition that can be tailored by controlling the oxidation parameters. This technique combines the demonstrated compliancy of a nano-film (on insulator) to yield an obedient substrate to accommodate lattice mismatch. Fabrication and characterization of the GexSi1-x thin-film will be discussed. The substrates thin film was characterized with RBS, Raman spectroscopy, AFM, SEM and x-TEM. The compliancy was tested with epitaxial growth of III-V heterostructure.
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