Abstract
A novel far-red emission NaLa2SbO6(NLSO):Mn4+ phosphor was prepared by traditional high temperature solid state reaction method. In the range of 200–600 nm, NLSO:Mn4+ phosphors exhibit broad excitation band centered at 322 nm and 498 nm. Under the excitation of 322 nm, the phosphor exhibits a far-red emission band centered at 707 nm in the range of 600–800 nm. In NLSO:Mn4+ phosphors, the optimum doping concentration is x = 0.003. In addition, the effect of Al3+-doped on the luminescent properties of the materials was also studied. The optimum doping concentration of Al3+ is x = 0.004, and the luminescence intensity of Mn4+ can be increased by 53%. In addition, NLSO:0.003Mn4+, 0.004Al3+ phosphors have high internal quantum efficiency and good thermal stability. The CIE chromaticity coordinates of NLSO:0.003Mn4+, yAl3+ phosphors are calculated, and which are located in the far-red region. All the results show that the synthesized phosphors have great application prospects in plant cultivation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
