Abstract
Cleaning of InP surfaces using electron cyclotron resonance (ECR) nitrogen plasmas has been studied. Electrical performance of Al/SiNx:H/InP structures has been analysed to determine the effect of the plasma cleaning. The SiNx:H insulator layers are deposited at 200°C using an ECR chemical vapour deposition technique. It is observed that a 30 s low-power (60 W) ECR N2 plasma treatment of InP surface reduces the interface defects and improves the resistivity and breakdown field values of the SiNx:H.
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